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1

Epitaxial GaAs by close space vapor transport

Chávez, F., Mimila-Arroyo, J., Bailly, F., Bourgoin, J. C.

Journal:

Journal of Applied Physics

Year:

1983

Language:

english

File:

PDF, 596 KB

english, 1983

2

Extension of Shockley’s transmission line method (TLM) to characterize ohmic contacts

Mimila-Arroyo, J, Herrera-Bernal, M G

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 900 KB

english, 2017

3

On the importance of the junction temperature on obtaining the charge transport parameters of a solar cell

Mimila-Arroyo, J

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.19 MB

english, 2019

4

Characterization of growth and properties of spray-deposited SnO2 films

J. Mimila-Arroyo, J.A. Reynoso, E. Saucedo, J.C. Bourgoin

Journal:

Journal of Crystal Growth

Year:

1984

Language:

english

File:

PDF, 380 KB

english, 1984

5

Excitonic recombination processes in GaAs grown by close-space vapour transport

L Bouzrara, R Ajjel, H Mejri, M.A Zaidi, S Alaya, J Mimila-Arroyo, H Maaref

Journal:

Microelectronics Journal

Year:

2004

Language:

english

File:

PDF, 103 KB

english, 2004

6

Impurity incorporation during epitaxial growth of GaAs by chemical reaction

M Gandouzi, J.C Bourgoin, J Mimila-Arroyo, Cl Grattepain, Ch Grattepain

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 151 KB

english, 2000

7

Modeling halogen chemical vapor deposition for III–V semiconductor compounds

J. Mimila-Arroyo, J. Dı́az-Reyes

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 193 KB

english, 2001

8

On the detailed mechanism of the burn-in in GaInP/GaAs HBTs

V. Cabrera-Arenas, J. Mimila-Arroyo

Journal:

physica status solidi (b)

Year:

2005

Language:

english

File:

PDF, 159 KB

english, 2005

9

Nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy

J. F. Rommeluère, L. Svob, F. Jomard, J. Mimila-Arroyo, G. Amiri, A. Lusson, V. Sallet, O. Gorochov, P. Galtier, Y. Marfaing

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 122 KB

english, 2004

10

Burn-in effects in GaInP/GaAs/GaAs HBTs

J. Mimila-Arroyo, S. Bland, S. Cassette, S. L. Delage

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 69 KB

english, 2003

11

On the energy band structure of the GaInP/GaAs heterojunction bipolar transistor

J. Mimila-Arroyo

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 265 KB

english, 2007

12

Electrical behavior of GaN-HEMT after fluoride plasma treatment

Gulnar Dagher, Thi Dak Ha Nguyen, Nicolas Péré-Laperne, Jaime Mimila-Arroyo, Melania Lijadi, François Jomard, Christophe Dupuis, Nathalie Bardou, Jean-Luc Pelouard

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 220 KB

english, 2011

13

Electric and photovoltaic properties of CdTe pn homojunctions

J. Mimila-Arroyo, Y. Marfaing, G. Cohen-Solal, R. Triboulet

Journal:

Solar Energy Materials

Year:

1979

Language:

english

File:

PDF, 376 KB

english, 1979

14

Method to probe the electrical activity of dislocations in non-intentionally doped n-GaN

J. Mimila-Arroyo, E. Morales, A. Lusson

Journal:

Materials Science and Engineering: B

Year:

2012

Language:

english

File:

PDF, 294 KB

english, 2012

15

Improvement of AlGaN/GaN/Si high electron mobility heterostructure performance by hydrogenation

Mimila-Arroyo, J., Jomard, F., Chevallier, J.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 669 KB

english, 2013

16

[IEEE 7th Conference on Semi-insulating III-V Materials, - Ixtapa, Mexico (21-24 April 1992)] Proceedings of the 7th Conference on Semi-insulating III-V Materials, - Semi-Insulating Epitaxial Semiconductors: The Case of InP

Garcia, J.C., Claverie, A., Mimila-Arroyo, J., Bourgoin, J.C.

Year:

1992

Language:

english

File:

PDF, 612 KB

english, 1992

17

Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers

Mimila-Arroyo, J., Bland, S. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

18

Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition

Mimila-Arroyo, J., Lusson, A., Chevallier, J., Barbé, M., Theys, B., Jomard, F., Bland, S. W.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 292 KB

english, 2001

19

Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization

Mimila-Arroyo, J., Dı́az-Reyes, J., Lusson, A.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 361 KB

english, 1998

20

Burn-in effect on GaInP heterojunction bipolar transistors

Mimila-Arroyo, J.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 295 KB

english, 2003

21

Erratum: “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN” [Appl. Phys. Lett. 90, 072107 (2007)]

Mimila-Arroyo, J., Barbé, M., Jomard, F., Chevallier, J., di Forte-Poisson, M. A., Delage, S. L., Dua, C.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 281 KB

english, 2007

22

Direct measurement of the recombination velocity on a grain boundary

Mimila-Arroyo, J., Bourgoin, J. C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 404 KB

english, 1984

23

Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy

Rommeluère, J. F., Svob, L., Jomard, F., Mimila-Arroyo, J., Lusson, A., Sallet, V., Marfaing, Y.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 296 KB

english, 2003

24

Currents of the GaInP∕GaAs heterojunction bipolar transistor as a function of the temperature

Mimila-Arroyo, J., Cabrera-Arenas, V.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 312 KB

english, 2006

25

Impurity incorporation in vapor phase epitaxy: S in GaAs

Sandoval, H., Mimila-Arroyo, J., Bourgoin, J. C.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 697 KB

english, 1995

26

Free electron gas primary thermometer: The bipolar junction transistor

Mimila-Arroyo, J.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 575 KB

english, 2013

27

Photoluminescence and electrical properties of close space vapor transport GaAs epitaxial layers

Mimila-Arroyo, J., Legros, R., Bourgoin, J. C., Chavez, F.

Journal:

Journal of Applied Physics

Year:

1985

Language:

english

File:

PDF, 466 KB

english, 1985

28

Carbon reactivation kinetics in the base of heterojunction GaInP–GaAs bipolar transistors

Mimila-Arroyo, J., Bland, S. W., Chevallier, J.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 225 KB

english, 2002

29

Carbon site switching in carbon-doped GaAs

Mimila-Arroyo, J., Bland, S. W., Lusson, A.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 230 KB

english, 2002

30

Deuterium passivation of electrically active defects in nonintentionally doped n-GaN

Mimila-Arroyo, J., Barbé, M., Jomard, F., Chevallier, J., di Forte-Poisson, M. A., Delage, S. L., Dua., C.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 258 KB

english, 2007

31

Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors

Mimila-Arroyo, J., Cabrera, V., Bland, S. W.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 233 KB

english, 2003

32

Carbon reactivation kinetics in GaAs: Its dependence on dopant precursor, doping level, and layer thickness

Mimila-Arroyo, J., Bland, S., Barbé, M.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 331 KB

english, 2002

33

Effect of parasitic series resistances and spurious currents on the extracted temperature of a bipolar junction transistor

Mimila-Arroyo, J.

Journal:

Review of Scientific Instruments

Year:

2013

Language:

english

File:

PDF, 820 KB

english, 2013

34

Semi-insulating epitaxial GaAs

Castenedo, R., Mimila-Arroyo, J., Bourgoin, J. C.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 596 KB

english, 1990

35

Gallium arsenide field-effect transistor by close spaced vapor transport epitaxy

Mimila-Arroyo, J., Castanedo, R., Chávez, F., González, R., Navarro, G., Reynoso, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 660 KB

english, 1987

36

Gallium Arsenide Electroluminescent P-N Junctions Made by Close-Spaced Vapor Transport Epitaxy

Mimila-Arroyo, Jaime, Navarro, Gerardo, Pérez, Gustavo, Castanedo, Rebeca

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 535 KB

1990

37

Growth of Cubic Boron Nitride Thin Films on GaAs by Reactive Vapor Phase Transport

Mimila-Arroyo, Jaime

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 1.12 MB

1997

38

HYDROGEN CO-DOPING IN III-V SEMICONDUCTORS: DOPANT PASSIVATION AND CARBON REACTIVATION KINETICS IN C-GaAs

MIMILA-ARROYO, J., BLAND, S. W.

Journal:

Modern Physics Letters B

Year:

2001

Language:

english

File:

PDF, 1.06 MB

english, 2001

39

MODELING THE CVD GROWTH OF III-V- COMPOUNDS

MIMILA-ARROYO, J., REYES, J. DIAZ

Journal:

Modern Physics Letters B

Year:

2001

Language:

english

File:

PDF, 414 KB

english, 2001

40

Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates

Mimila-Arroyo, J., Rommeluère, J.F., Barbé, M., Jomard, F., Tromson-Carli, A., Gorochov, O., Marfaing, Y., Galtier, P.

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 355 KB

english, 2005

41

[AIP NOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007 - Tokyo (Japan) (9-14 September 2007)] AIP Conference Proceedings - Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization

Tartarin, Jean-Guy, Soubercaze-Pun, Geoffroy, Grondin, Jean-Laurent, Bary, Laurent, Mimila-Arroyo, Jaime, Chevallier, Jacques

Year:

2007

Language:

english

File:

PDF, 283 KB

english, 2007

42

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2004 - San Jose, CA (Monday 26 January 2004)] Quantum Sensing and Nanophotonic Devices - Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy

Rommeluere, Jean-Francois, Svob, L., Mimila-Arroyo, J., Hassani, S. A. S., Jomard, F., Amiri, G., Lusson, A., Sallet, V., Galtier, Pierre, Marfaing, Y., Razeghi, Manijeh, Brown, Gail J.

Year:

2004

Language:

english

File:

PDF, 158 KB

english, 2004

43

Growth and characterisation of InP by close vapour transport

Mimila-Arroyo, J., Diaz, J., Lusson, A., Grattepain, C., Bisaro, R., Bourgoin, J. C.

Journal:

Materials Science and Technology

Year:

1996

Language:

english

File:

PDF, 597 KB

english, 1996

44

Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors

Mimila-Arroyo, J.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 700 KB

english, 2016

45

The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

Mimila-Arroyo, J.

Journal:

Review of Scientific Instruments

Year:

2017

Language:

english

File:

PDF, 674 KB

english, 2017

46

On the importance of the junction temperature on obtaining the charge transport parameters of a solar cell

Mimila-Arroyo, J

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.19 MB

2019

47

Thermal reliability of deuterated AlGaN/GaN HEMTs

Arreola-Pina, A.S., Mimila-Arroyo, J.

Journal:

Materials Science in Semiconductor Processing

Year:

2020

File:

PDF, 2.49 MB

2020

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